SUD40N03-18P v ds (v) r ds(on) ( ) i d (a) a 30 0.018 @ v gs = 10 v 40 30 0.027 @ v gs = 4.5 v 34 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD40N03-18P
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) b t c = 25 c i d 40 a continuous drain current (t j = 175 c) b t c = 100 c i d 28 a pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 40 maximum power dissipation t c = 25 c p d 62.5 c w maximum power dissipation t a = 25 c p d 7.5 b w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol typical maximum unit junction - to - ambient b t 10 sec r thja 17 20 c/w j unc ti on- t o- a m bi en t b steady state r thja 50 60 c/w junction-to-case r thjc 2 2.4 junction-to-lead r thjl 4 4.8 c/w notes a. package limited. b. surface mounted on 1o x1o fr4 board, t 10 sec. c. see soa curve for voltage derating. n-channel 30 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 4 SUD40N03-18P vishay siliconix new product document number: 71086 s-63636erev. a, 08-nov-99 www.vishay.com faxback 408-970-5600 2-1 n-channel 30-v (d-s) 175 c mosfet v ds (v) r ds(on) ( ) i d (a) a 30 0.018 @ v gs = 10 v 40 30 0.027 @ v gs = 4.5 v 34 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD40N03-18P
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) b t c = 25 c i d 40 a continuous drain current (t j = 175 c) b t c = 100 c i d 28 a pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 40 maximum power dissipation t c = 25 c p d 62.5 c w maximum power dissipation t a = 25 c p d 7.5 b w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol typical maximum unit junction - to - ambient b t 10 sec r thja 17 20 c/w j unc ti on- t o- a m bi en t b steady state r thja 50 60 c/w junction-to-case r thjc 2 2.4 junction-to-lead r thjl 4 4.8 c/w notes a. package limited. b. surface mounted on 1o x1o fr4 board, t 10 sec. c. see soa curve for voltage derating. free datasheet http:///
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